Characteristics of GaN-based photonic crystal surface emitting lasers
| dc.citation.epage | en_US | |
| dc.citation.issue | 11 | en_US |
| dc.citation.volume | 93 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | Lu, Tien-chang | en_US |
| dc.contributor.author | Chen, Shih-Wei | en_US |
| dc.contributor.author | Kao, Tsung-Ting | en_US |
| dc.contributor.author | Liu, Tzu-Wei | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:55Z | |
| dc.date.available | 2014-12-08T15:10:55Z | |
| dc.date.issued | 2008-09-15 | en_US |
| dc.description.abstract | Characteristics of GaN-based photonic crystal surface emitting lasers (PCSELs) were investigated and analyzed. The GaN-based PCSEL emits a blue wavelength at 401.8 nm with a linewidth of 1.6 angstrom and shows a threshold energy density about 2.7 mJ/cm(2) under the optical pumping at room temperature. The lasing wavelength emitted from PCSELs with different lattice constants occurs at the calculated band edges showing different polarization angles due to the light diffracted in specific directions, corresponding exactly to Gamma, K, and M directions in the K-space. Furthermore, the PCSEL also shows a spontaneous emission coupling efficiency beta of about 5 X 10(-3) and a characteristic temperature of 148 K. (C) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2986527 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2986527 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8348 | |
| dc.identifier.wosnumber | WOS:000259797900011 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of GaN-based photonic crystal surface emitting lasers | en_US |
| dc.type | Article | en_US |