Design of Low Noise Amplifier in Common-Gate Configuration for Ultra-Wideband Applications

Abstract

A new 3-10 GHz ultra-wide-band (UWB) low noise amplifier (LNA) is designed in TSMC 0.18um CMOS process. Reactive matching of common gate configuration is extended to wide bandwidth using the Butterworth filter. A systematic approach to design a wide band low noise amplifiers is especially emphasized. The amplifier with on-chip filter spanning 3-10GHz delivers 7dB gain, 4dB noise figure, and -2dBm input IP3 at 6GHz, with power consumption 7.6mW. The input and output return loss (S11 and S22) are verified to be less than -10dB. The comparisons of the measurement results are also indicated.