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Design of Low Noise Amplifier in Common-Gate Configuration for Ultra-Wideband Applications

dc.citation.epage+en_US
dc.citation.spage412en_US
dc.citation.woscount0en_US
dc.contributor.authorKao, Yao Huangen_US
dc.contributor.authorHsieh, Chia Hungen_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2017-04-21T06:49:11Z
dc.date.available2017-04-21T06:49:11Z
dc.date.issued2007en_US
dc.description.abstractA new 3-10 GHz ultra-wide-band (UWB) low noise amplifier (LNA) is designed in TSMC 0.18um CMOS process. Reactive matching of common gate configuration is extended to wide bandwidth using the Butterworth filter. A systematic approach to design a wide band low noise amplifiers is especially emphasized. The amplifier with on-chip filter spanning 3-10GHz delivers 7dB gain, 4dB noise figure, and -2dBm input IP3 at 6GHz, with power consumption 7.6mW. The input and output return loss (S11 and S22) are verified to be less than -10dB. The comparisons of the measurement results are also indicated.en_US
dc.identifier.isbn978-1-4244-0748-4en_US
dc.identifier.journal2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/135117
dc.identifier.wosnumberWOS:000261353300106en_US
dc.language.isoen_USen_US
dc.subjectUltra-widebanden_US
dc.subjectLow-noise amplifieren_US
dc.titleDesign of Low Noise Amplifier in Common-Gate Configuration for Ultra-Wideband Applicationsen_US
dc.typeProceedings Paperen_US

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