Investigation of GaN LED with Be-implanted Mg-doped GaN layer
| dc.citation.epage | 23 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 19 | en_US |
| dc.citation.volume | 113 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Huang, HW | en_US |
| dc.contributor.author | Kao, CC | en_US |
| dc.contributor.author | Chu, JT | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.author | Yu, CC | en_US |
| dc.contributor.author | Lin, CF | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:27Z | |
| dc.date.available | 2014-12-08T15:37:27Z | |
| dc.date.issued | 2004-10-15 | en_US |
| dc.description.abstract | We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 x 10(18)CM(-3) and low specific contact resistance value of 2.0 x 10(-4) Omegacm(2) than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process. (C) 2004 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.mseb.2004.05.024 | en_US |
| dc.identifier.issn | 0921-5107 | en_US |
| dc.identifier.journal | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.mseb.2004.05.024 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25760 | |
| dc.identifier.wosnumber | WOS:000224050000004 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Gallium nitride (GaN) | en_US |
| dc.subject | light emitting diode (LED) | en_US |
| dc.title | Investigation of GaN LED with Be-implanted Mg-doped GaN layer | en_US |
| dc.type | Article | en_US |