Photoluminescence study of GaSe doped with Er

Abstract

The Er-doped GaSe crystal has been investigated by using temperature dependent photoluminescence (TDPL), a Fourier-transform infrared spectrometer (FTIR), and Hall effect measurements. The Er-doped GaSe appears to be a p-type semiconductor. The impurity level at similar to2.064 eV is observed and located at similar to64 meV above the valence band in both the as-grown and the annealed Er doped GaSe crystal. Additionally, the infrared luminescence and transmission spectra which have arisen from the intracenter transitions 4I(9/2) --> 4I(15/2), 4I(11/2) --> 4I(15/2), and 4I(13/2) --> 4I(15/2) of erbium ions have been observed at similar to0.81, 0.99, and 1.54 mum, respectively. The annealing process under excess Se atmosphere at 600degreesC for 72 h can enhance the crystal to have more active erbium ions.