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5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixer

dc.citation.epage451en_US
dc.citation.issue2en_US
dc.citation.spage450en_US
dc.citation.volume49en_US
dc.citation.woscount0
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorWu, Tzung-Hanen_US
dc.contributor.authorWu, Tse-Hungen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.date.accessioned2014-12-08T15:14:46Z
dc.date.available2014-12-08T15:14:46Z
dc.date.issued2007-02-01en_US
dc.description.abstractActive PMOS loads with common mode feedback to stabilize the bias points are employed in the Gilbert mixer loads to increase the mixer gain. Good device matching and the deep trench isolation technique in the SiGe HBT technology can improve the port-to-port isolations. A 16 dB conversion gain, Ip(ldB) = -21 dBm and IIP3 = - 11 dBm using 0.35 mu m SiGe BiCMOS Gilbert downconversion micromixer is demonstrated when RF = 5.2 GHz and LO = 5.17 GHz with -66 dB LO-IF, -52 dB LO-RF, and -24 dB RF-IF isolations. (c) 2006 Wiley Periodicals, Inc.en_US
dc.identifier.doi10.1002/mop.22152en_US
dc.identifier.issn0895-2477en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.22152en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/11160
dc.identifier.wosnumberWOS:000243297000057
dc.language.isoen_USen_US
dc.subjectSiGeBiCMOSen_US
dc.subjectdeep trench isolationen_US
dc.subjectGilbert mixeren_US
dc.subjectCMFBen_US
dc.title5.2 Ghz high isolation sige BICMOS CMFB Gilbert mixeren_US
dc.typeArticleen_US

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