Spin-dependent electronic tunneling at zero magnetic field
| dc.citation.epage | 15400 | en_US |
| dc.citation.issue | 23 | en_US |
| dc.citation.spage | 15397 | en_US |
| dc.citation.volume | 58 | en_US |
| dc.citation.woscount | 75 | en_US |
| dc.contributor.author | Voskoboynikov, A | en_US |
| dc.contributor.author | Liu, SS | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2019-04-03T06:39:22Z | |
| dc.date.available | 2019-04-03T06:39:22Z | |
| dc.date.issued | 1998-12-15 | en_US |
| dc.description.abstract | The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2]. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.58.15397 | en_US |
| dc.identifier.issn | 2469-9950 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.58.15397 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/148013 | |
| dc.identifier.wosnumber | WOS:000077542100031 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Spin-dependent electronic tunneling at zero magnetic field | en_US |
| dc.type | Article | en_US |