Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 49 | |
| dc.contributor.author | Peng, Wei Chih | en_US |
| dc.contributor.author | Wu, Yew Chung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:16:11Z | |
| dc.date.available | 2014-12-08T15:16:11Z | |
| dc.date.issued | 2006-07-24 | en_US |
| dc.description.abstract | The InGaN-GaN epitaxial films were grown by low-pressure metal-organic chemical vapor deposition on a sapphire substrate, and then the light-emitting diode (LED) with double roughened (p-GaN and undoped-GaN) surfaces was fabricated by surface-roughening, wafer-bonding, and laser lift-off technologies. It was found that the front side luminance intensity of double roughened LED was 2.77 times higher than that of the conventional LED at an injection current of 20 mA. The backside luminance intensity was 2.37 times higher than that of the conventional LED. This is because the double roughened surfaces can provide photons multiple chances to escape from the LED surface, and redirect photons, which were originally emitted out of the escape cone, back into the escape cone. | en_US |
| dc.identifier.doi | 10.1063/1.2236462 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2236462 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12015 | |
| dc.identifier.wosnumber | WOS:000239376500016 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface | en_US |
| dc.type | Article | en_US |