NEW INTEGRATED VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE DEVICE LAMBDA MOSFET
| dc.citation.epage | 781 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 779 | en_US |
| dc.citation.volume | 22 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.author | LAI, KN | en_US |
| dc.contributor.department | 工學院 | zh_TW |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | College of Engineering | en_US |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:06:32Z | |
| dc.date.available | 2014-12-08T15:06:32Z | |
| dc.date.issued | 1979 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5105 | |
| dc.identifier.wosnumber | WOS:A1979HQ67600006 | |
| dc.language.iso | en_US | en_US |
| dc.title | NEW INTEGRATED VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE DEVICE LAMBDA MOSFET | en_US |
| dc.type | Article | en_US |
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