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Oxide-confined vertical-cavity surface-emitting lasers pumped Nd : YVO4 microchip lasers

dc.citation.epage274en_US
dc.citation.issue3en_US
dc.citation.spage272en_US
dc.citation.volume14en_US
dc.citation.woscount14
dc.contributor.authorLan, YPen_US
dc.contributor.authorChen, YFen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorLai, HCen_US
dc.contributor.authorPan, JSen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:42:45Z
dc.date.available2014-12-08T15:42:45Z
dc.date.issued2002-03-01en_US
dc.description.abstractIn this letter, we demonstrate an experimental study of using a large area oxide-confined vertical-cavity surface-emitting laser (VCSEL) to pump a Nd:YVO4 microchip laser. The maximum output power of 1.2 mW in TEM00 mode is obtained with a pump power of 8.2 mW. Experimental results show that the complex transverse modal behavior of VCSELs in the higher injection current may cause an impediment of power scaling.en_US
dc.identifier.doi10.1109/68.986783en_US
dc.identifier.issn1041-1135en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/68.986783en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28979
dc.identifier.wosnumberWOS:000174081500004
dc.language.isoen_USen_US
dc.subjectoxide-confineden_US
dc.subjectsolid state lasersen_US
dc.subjecttransverse modeen_US
dc.subjectvertical-cavity lasersen_US
dc.titleOxide-confined vertical-cavity surface-emitting lasers pumped Nd : YVO4 microchip lasersen_US
dc.typeArticleen_US

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