Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs
| dc.citation.epage | 2833 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 2828 | en_US |
| dc.citation.volume | 22 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | Chang, YH | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Lai, FI | en_US |
| dc.contributor.author | Chang, YA | en_US |
| dc.contributor.author | Lu, CY | en_US |
| dc.contributor.author | Laih, LH | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:15Z | |
| dc.date.available | 2014-12-08T15:37:15Z | |
| dc.date.issued | 2004-12-01 | en_US |
| dc.description.abstract | This paper presents the fabrication and characteristics of high-performance 850-mn InGaAsP-InGaP strain-compensated multiple-quantum-well (MQW) vertical-cavity surface-emitting lasers (VCSELs). The InGaAsP-InGaP MQW's composition was optimized through theoretical calculations, and the growth condition was optimized using photoluminescence. These VCSELs exhibit superior performance with characteristics threshold currents similar to0.4 mA and slope efficiencies similar to0.6 mW/mA. The threshold current change with temperature is less than 0.2 mA, and the slope efficiency drops less than similar to30% when the substrate temperature is raised from room temperature to 85degreesC. A high modulation bandwidth of 14.5 GHz and a modulation current efficiency factor of 11.6 GHz/(mA) (1/2) are demonstrated. The authors have accumulated life test data up to 1000 h at 70degreesC/8 mA. | en_US |
| dc.identifier.doi | 10.1109/JLT.2004.834835 | en_US |
| dc.identifier.issn | 0733-8724 | en_US |
| dc.identifier.journal | JOURNAL OF LIGHTWAVE TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/JLT.2004.834835 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25596 | |
| dc.identifier.wosnumber | WOS:000225622600015 | |
| dc.language.iso | en_US | en_US |
| dc.subject | high-speed electronics | en_US |
| dc.subject | InGaAsP-InGaP | en_US |
| dc.subject | strain-compensated | en_US |
| dc.subject | vertical-cavity surface-emitting lasers (VCSELs) | en_US |
| dc.title | Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWs | en_US |
| dc.type | Article | en_US |