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Stability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illumination

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dc.citation.epage440en_US
dc.citation.issue4en_US
dc.citation.spage437en_US
dc.citation.volume37en_US
dc.contributor.authorYang, Zhaoen_US
dc.contributor.authorMeng, Tingen_US
dc.contributor.authorZhang, Qunen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2017-04-21T06:56:31Z
dc.date.available2017-04-21T06:56:31Z
dc.date.issued2016-04en_US
dc.description.abstractAmorphous indium-tungsten oxide (a-IWO) thin-film transistors (TFTs) were prepared by the RF-sputtering method, and their electrical stability under various conditions of wavelength light illumination was investigated. It was found that the electrical stability of the devices was dependent on the light wavelength and the illumination time. The analysis reveals that the improvement of the light illumination stability of the a-IWO-TFTs is ascribed to the oxygen vacancies transition between V-O-V-O(+) and V-O-V-O(2+) under different wavelength illuminations.en_US
dc.identifier.doi10.1109/LED.2016.2524417en_US
dc.identifier.issn0741-3106en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2016.2524417en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/133432
dc.identifier.wosnumberWOS:000373129300022en_US
dc.language.isoen_USen_US
dc.subjectIllumination stabilityen_US
dc.subjectindium-tungstenoxide (IWO)en_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleStability of Amorphous Indium-Tungsten Oxide Thin-Film Transistors Under Various Wavelength Light Illuminationen_US

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