Pumping intensity dependent surface charge accumulation and redshifted microphotoluminescence of silicon-implanted quartz

Abstract

The pumping-intensity dependency of nanocrystallite silicon (nc-Si) related microphotoluminescence (mu-PL) from multirecipe Si-implanted quartz is characterized. After annealing at 1100degreesC for 3 h, themu-PL at 724 nm contributed by nc-Si with a diameter of about 4 nm is maximized. By increasing the pumping intensity from 10 kW/cm(2) to 300 kW/cm(2), the mu-PLs of 1 and 3-h-annealed Si-implanted quartz samples are redshifted by <1.2 and 11 nm, respectively. The mu-PL of 3-h-annealed sample further redshifts by 2.5 nm after pumping at 300 kW/cm(2) for h. Such a redshift in PL is attributed to the anomalous quantum Stark effect under strong illumination, which photoionizes the buried nc-Si and initiates an electric field beneath the surface of Si-implanted quartz. The measurement of accumulating charges and voltage drop during illumination primarily elucidate the correlation between redshift in PL and the photoionized nc-Si induced surface electric field. (C) 2004 American Institute of Physics.