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OPTICAL AND NOISE CHARACTERISTICS OF AMORPHOUS SI/SIC SUPERLATTICE REACH-THROUGH AVALANCHE PHOTODIODES

dc.citation.epage1809en_US
dc.citation.issue8en_US
dc.citation.spage1804en_US
dc.citation.volume37en_US
dc.citation.woscount15
dc.contributor.authorHONG, JWen_US
dc.contributor.authorLAIH, WLen_US
dc.contributor.authorCHEN, YWen_US
dc.contributor.authorFANG, YKen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorGONG, Jen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:05:31Z
dc.date.available2014-12-08T15:05:31Z
dc.date.issued1990-08-01en_US
dc.identifier.doi10.1109/16.57130en_US
dc.identifier.issn0018-9383en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.57130en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4048
dc.identifier.wosnumberWOS:A1990DN85500005
dc.language.isoen_USen_US
dc.titleOPTICAL AND NOISE CHARACTERISTICS OF AMORPHOUS SI/SIC SUPERLATTICE REACH-THROUGH AVALANCHE PHOTODIODESen_US
dc.typeArticleen_US

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