MOS magnetic current sensor based on standard CMOS process
| dc.citation.epage | 602 | en_US |
| dc.citation.spage | 601 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 1 | en_US |
| dc.contributor.author | Yang, HM | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Huang, YC | en_US |
| dc.contributor.author | Lee, CL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-02T06:00:22Z | |
| dc.date.available | 2019-04-02T06:00:22Z | |
| dc.date.issued | 1997-03-27 | en_US |
| dc.description.abstract | A novel current sensor is proposed. The current sensor consists of one MOS magnetic sensor and a flat coil in an industrial CMOS process, An experimental device demonstrated a sensitivity of 8.4mV/A. | en_US |
| dc.identifier.doi | 10.1049/el:19970375 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:19970375 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/149486 | |
| dc.identifier.wosnumber | WOS:A1997WU00100041 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | magnetic sensors | en_US |
| dc.title | MOS magnetic current sensor based on standard CMOS process | en_US |
| dc.type | Article | en_US |
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