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DOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLS

dc.citation.epage682en_US
dc.citation.issue7en_US
dc.citation.spage679en_US
dc.citation.volume25en_US
dc.citation.woscount9
dc.contributor.authorWU, CYen_US
dc.contributor.authorCHEN, JFen_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:25Z
dc.date.available2014-12-08T15:06:25Z
dc.date.issued1982en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4982
dc.identifier.wosnumberWOS:A1982NV19100020
dc.language.isoen_USen_US
dc.titleDOPING AND TEMPERATURE DEPENDENCES OF MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME DEDUCED FROM THE SPECTRAL RESPONSE MEASUREMENTS OF P-N-JUNCTION SOLAR-CELLSen_US
dc.typeArticleen_US

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