Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors
| dc.citation.epage | 229 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 227 | en_US |
| dc.citation.volume | 22 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lin, Wei-Hsun | en_US |
| dc.contributor.author | Tseng, Chi-Che | en_US |
| dc.contributor.author | Chao, Kuang-Ping | en_US |
| dc.contributor.author | Mai, Shu-Cheng | en_US |
| dc.contributor.author | Lin, Shih-Yen | en_US |
| dc.contributor.author | Wu, Meng-Chyi | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:07:24Z | |
| dc.date.available | 2014-12-08T15:07:24Z | |
| dc.date.issued | 2010-02-15 | en_US |
| dc.description.abstract | Quantum-dot infrared photodetectors (QDIPs) with InGaAs capping layers are investigated. Compared with the standard QDIP with 2.5-mono-layer (ML) InAs QDs, the detection wavelength is shifted from 6 to 7.9 m for an 8-nm InGaAs-capped QDIP. By decreasing the QD coverage from 2.5 to 2.0 ML, an even longer detection wavelength 10.4 m is observed, which is attributed to the higher energy levels of the QD excited states resulted from the smaller QDs. By further increasing the capping layer thickness to 12 nm, longer detection wavelengths with broad response 10-18 m is observed for the InGaAs-capped QDIP. | en_US |
| dc.identifier.doi | 10.1109/LPT.2009.2037727 | en_US |
| dc.identifier.issn | 1041-1135 | en_US |
| dc.identifier.journal | IEEE PHOTONICS TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LPT.2009.2037727 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5841 | |
| dc.identifier.wosnumber | WOS:000275381000005 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Quantum-dot infrared photodetectors (QDIPs) | en_US |
| dc.title | Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors | en_US |
| dc.type | Article | en_US |