Intracavity measurement of liquid crystal layer thickness by wavelength tuning of an external cavity laser diode
| dc.citation.epage | 7912 | en_US |
| dc.citation.issue | 20 | en_US |
| dc.citation.spage | 7905 | en_US |
| dc.citation.volume | 13 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Lan, YP | en_US |
| dc.contributor.author | Lin, YF | en_US |
| dc.contributor.author | Li, YT | en_US |
| dc.contributor.author | Pan, RP | en_US |
| dc.contributor.author | Lee, CK | en_US |
| dc.contributor.author | Pan, CL | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:18:13Z | |
| dc.date.available | 2014-12-08T15:18:13Z | |
| dc.date.issued | 2005-10-03 | en_US |
| dc.description.abstract | The gap of a planar-aligned liquid crystal (LC) cell is measured by a novel method: Monitoring the change in output wavelength of an external-cavity diode laser by varying the voltage driving the LC cell placed in the laser cavity. This method is particularly suitable for measurement of LC cells of small phase retardation. Measurement errors of +/- 0.5 % and +/- 0.6 % for 9.6-mu m and 4.25-mu m cells with phase retardations of 1.63 mu m and 0.20 mu m respectively are demonstrated. (c) 2005 Optical Society of America. | en_US |
| dc.identifier.doi | 10.1364/OPEX.13.007905 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OPEX.13.007905 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13173 | |
| dc.identifier.wosnumber | WOS:000232544800022 | |
| dc.language.iso | en_US | en_US |
| dc.title | Intracavity measurement of liquid crystal layer thickness by wavelength tuning of an external cavity laser diode | en_US |
| dc.type | Article | en_US |