The structural and electrical characteristics of silicon-implanted borosilicate glass

Abstract

The structural and electrical properties of silicon-implanted borosilicate glass (BSO:Si+) are studied. The nearly amorphous phase of as-implanted BSO:Si+ with a weak and broadened X-ray diffraction peak transforms into crystallite phases with associated peaks positioned at azimuth angles of 29degrees and 14degrees after thermal annealing. These peaks correspond to (111)-oriented Si nanocrystals of 0.6-0.8 nm size and the regrown (021)-oriented BSO host, respectively. The intensity of the photoluminescent (PL) peak of the BSO:Si+ centered at 520 nm is found to decrease due to both the elimination of the radiative defects and the precipitation of Si nanocrystals, however, nanocrystal-related PL is not initiated even after low-temperature and long-term (> 4h) annealing. Relatively high leakage current Schottky diodes with contact patterns for transmission line measurement (TLM) made on as-implanted BSO:Si+ reveal the defect-enhanced current transport mechanism. After annealing at 500degreesC for 60 min or longer, the leakage current of the BSO:Si+ diode dramatically decreases by at least two orders of magnitude. The current-voltage analysis attributes the disappearance of the resonant tunneling behavior of the TLM diode made on as-implanted BSO:Si+ with negative differential resistance to the annealing-induced reduction of radiative defect concentration.