NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS
| dc.citation.epage | 1700 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 1693 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 7 | |
| dc.contributor.author | LO, SH | en_US |
| dc.contributor.author | LEE, CP | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:11Z | |
| dc.date.available | 2014-12-08T15:05:11Z | |
| dc.date.issued | 1991-08-01 | en_US |
| dc.description.abstract | The small-signal output conductance of GaAs MESFET's on semi-insulating substrate has been studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviors of the output conductance are analyzed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentration and acceptor concentration have been analyzed and compared. For devices with higher trap concentration and higher acceptor concentration, the output conductance is lower but exhibits stronger frequency dependence. | en_US |
| dc.identifier.doi | 10.1109/16.119003 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.119003 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3714 | |
| dc.identifier.wosnumber | WOS:A1991FW96400002 | |
| dc.language.iso | en_US | en_US |
| dc.title | NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS | en_US |
| dc.type | Article | en_US |