Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane as p-type dopant
| dc.citation.epage | en_US | |
| dc.citation.issue | 7 | en_US |
| dc.citation.volume | 94 | en_US |
| dc.citation.woscount | 19 | |
| dc.contributor.author | Mi, Bao Xiu | en_US |
| dc.contributor.author | Gao, Zhi Qiang | en_US |
| dc.contributor.author | Cheah, Kok Wai | en_US |
| dc.contributor.author | Chen, Chin H. | en_US |
| dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
| dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
| dc.date.accessioned | 2014-12-08T15:09:58Z | |
| dc.date.available | 2014-12-08T15:09:58Z | |
| dc.date.issued | 2009-02-16 | en_US |
| dc.description.abstract | We demonstrate that 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane (F2-HCNQ) can serve as an excellent electrical doping material for hole transport materials with the highest occupied molecular orbital level as high as 5.4 eV, such as N,N(')-di(naphthalene-1-yl)-N,N(')-diphenyl-benzidine (NPB). With its relatively strong electron-accepting ability and high thermal stability, F2-HCNQ doped NPB organic light-emitting diode (OLED) showed improved power efficiency with low driving voltage. The tris(8-hydroxyquinoline)aluminum based OLED with F2-HCNQ doped NPB layer and Cs(2)O doped bathophenanthroline electron transport layer exhibits power efficiency of 3.6 lm/W with driving voltage of 3.2 V at 100 cd/m(2). | en_US |
| dc.identifier.doi | 10.1063/1.3073719 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3073719 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7620 | |
| dc.identifier.wosnumber | WOS:000263599200091 | |
| dc.language.iso | en_US | en_US |
| dc.subject | electrical conductivity | en_US |
| dc.subject | organic light emitting diodes | en_US |
| dc.subject | organic semiconductors | en_US |
| dc.subject | thermal stability | en_US |
| dc.title | Organic light-emitting diodes using 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane as p-type dopant | en_US |
| dc.type | Article | en_US |