Carrier dynamics in InN nanorod arrays
| dc.citation.epage | 775 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 769 | en_US |
| dc.citation.volume | 20 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Ahn, Hyeyoung | en_US |
| dc.contributor.author | Yu, Chih-Cheng | en_US |
| dc.contributor.author | Yu, Pyng | en_US |
| dc.contributor.author | Tang, Jau | en_US |
| dc.contributor.author | Hong, Yu-Liang | en_US |
| dc.contributor.author | Gwo, Shangjr | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:21:28Z | |
| dc.date.available | 2014-12-08T15:21:28Z | |
| dc.date.issued | 2012-01-16 | en_US |
| dc.description.abstract | In this report, we investigated ultrafast carrier dynamics of vertically aligned indium nitride (InN) nanorod (NR) arrays grown by molecular-beam epitaxy on Si(111) substrates. Dominant band filling effects were observed and were attributed to a partial bleaching of absorption at the probe wavelengths near the absorption edge. Carrier relaxation in nanorod samples was strongly dependent on the rod size and length. In particular, a fast initial decay was observed for carriers in NRs with a small diameter (similar to 30 nm), the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in semiconductor nanostructures. (C)2012 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OE.20.000769 | en_US |
| dc.identifier.issn | 1094-4087 | en_US |
| dc.identifier.journal | OPTICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OE.20.000769 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15255 | |
| dc.identifier.wosnumber | WOS:000300057700008 | |
| dc.language.iso | en_US | en_US |
| dc.title | Carrier dynamics in InN nanorod arrays | en_US |
| dc.type | Article | en_US |