High-program/erase-speed SONOS with in situ silicon nanocrystals
| dc.citation.epage | 1151 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1148 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 15 | |
| dc.contributor.author | Chiang, Tsung-Yu | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.author | Wu, Yi-Hong | en_US |
| dc.contributor.author | Yang, Wen-Luh | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:51Z | |
| dc.date.available | 2014-12-08T15:10:51Z | |
| dc.date.issued | 2008-10-01 | en_US |
| dc.description.abstract | In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (> 5.5 V), lower operation voltage, high P/E speed, and longer retention time (> 10(8) s for 13% charge loss). | en_US |
| dc.identifier.doi | 10.1109/LED.2008.2002944 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2002944 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8305 | |
| dc.identifier.wosnumber | WOS:000259812900020 | |
| dc.language.iso | en_US | en_US |
| dc.subject | memory window | en_US |
| dc.subject | nonvolatile memory | en_US |
| dc.subject | retention time | en_US |
| dc.subject | silicon nanocrystals (Si-NC) | en_US |
| dc.title | High-program/erase-speed SONOS with in situ silicon nanocrystals | en_US |
| dc.type | Article | en_US |