High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
| dc.citation.epage | en_US | |
| dc.citation.issue | 6 | en_US |
| dc.citation.volume | 102 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Wu, Hung-Chi | en_US |
| dc.contributor.author | Chien, Chao-Hsin | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:29:30Z | |
| dc.date.available | 2014-12-08T15:29:30Z | |
| dc.date.issued | 2013-02-11 | en_US |
| dc.description.abstract | This work demonstrates In-Ga-Zn-O (IGZO) as source and drain electrodes in IGZO-thin film transistors (TFTs). The fabricated TFT depicts excellent electrical properties; its mobility is 18.02 (cm(2)/V s), threshold voltage (Vth) is 0.3 (V), on/off ratio is 1.63 x 10(8) and subthreshold swing (S. S.) is 239 (mV/decade). We find using rapid thermal annealing treatment can convert IGZO into an effective conductor, and the transparency of IGZO remained almost unchanged. We also find sufficient thermal budget is needed for getting stable transfer curve and output characteristic; otherwise, current fluctuation in on-state can be easily observed. With IGZO electrodes, fully transparent IGZO-TFTs can be thus realized on a glass substrate. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789997] | en_US |
| dc.identifier.doi | 10.1063/1.4789997 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4789997 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21220 | |
| dc.identifier.wosnumber | WOS:000315053300034 | |
| dc.language.iso | en_US | en_US |
| dc.title | High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes | en_US |
| dc.type | Article | en_US |