Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
| dc.citation.epage | 406 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 404 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Jong, FC | en_US |
| dc.contributor.author | Huang, TY | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.author | Lin, HC | en_US |
| dc.contributor.author | Wang, MF | en_US |
| dc.contributor.author | Chang, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:49:20Z | |
| dc.date.available | 2014-12-08T15:49:20Z | |
| dc.date.issued | 1998-02-19 | en_US |
| dc.description.abstract | The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32789 | |
| dc.identifier.wosnumber | WOS:000072232900062 | |
| dc.language.iso | en_US | en_US |
| dc.title | Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs | en_US |
| dc.type | Article | en_US |