High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
| dc.citation.epage | 1441 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1439 | en_US |
| dc.citation.volume | 78 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | Pan, TM | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chao, TS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:05Z | |
| dc.date.available | 2014-12-08T15:44:05Z | |
| dc.date.issued | 2001-03-05 | en_US |
| dc.description.abstract | High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2001 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1352044 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1352044 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29779 | |
| dc.identifier.wosnumber | WOS:000167151300041 | |
| dc.language.iso | en_US | en_US |
| dc.title | High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films | en_US |
| dc.type | Article | en_US |