Design of a CMOS T/R Switch With High Power Capability: Using Asymmetric Transistors

Abstract

A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 mu m CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P(1 dB)s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.