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Nanoindentation response of zinc titanate thin films deposited by co-sputtering process

dc.citation.epage6730en_US
dc.citation.issue18en_US
dc.citation.volume258en_US
dc.citation.woscount2
dc.contributor.authorWu, Shyh-Chien_US
dc.contributor.authorJeng, Yeau-Renen_US
dc.contributor.authorYau, Wei-Hungen_US
dc.contributor.authorWu, Kuan-Teen_US
dc.contributor.authorTsai, Chien-Huangen_US
dc.contributor.authorChou, Chang-Pinen_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.date.accessioned2014-12-08T15:23:06Z
dc.date.available2014-12-08T15:23:06Z
dc.date.issued2012-07-01en_US
dc.description.abstractIn this study, ZnTiO3 films were grown by radio frequency magnetron co-sputtering using a sintered ceramic target on silicon substrates, we used nanoindenter techniques under a CSM mode to evaluate the hardness (H) and elastic modulus (E) of the films after annealing in temperature range of 520-820 degrees C. The measured values of hardness and elastic moduli of the ZnTiO3 films were in the range from 8.5 +/- 0.4 to 5.6 +/- 0.4 GPa and from 171 +/- 2.3 to 155 +/- 2.5 GPa, respectively. It is evident that an increase in the roughness due to high annealing temperature using atomic force microscopy. The XRD patterns were observed that as-deposited films are mainly amorphous, however, the hexagonal ZnTiO3 phase was observed with the ZnTiO3 (1 0 4), (1 1 0), (1 1 6), and (2 1 4) peaks from 620 to 820 degrees C, indicating that there is highly (1 0 4)-oriented ZnTiO3 on the silicon substrate. The X-ray photoelectron spectroscopy core level analysis of the ZnTiO3 films have been measured for O 1s that can be attributed the weaker bonds and lower resistance at the film based on the higher annealed temperature. The H, M, Rms, and Ra were altered due to the grain growth and recovery to result in a relax crystallinity at ZnTiO3 films. (C) 2012 Elsevier B. V. All rights reserved.en_US
dc.identifier.issn0169-4332en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/16257
dc.identifier.wosnumberWOS:000304004100003
dc.language.isoen_USen_US
dc.subjectRadio frequency magnetron co-sputteringen_US
dc.subjectHardnessen_US
dc.subjectAtomic force microscopyen_US
dc.subjectX-ray photoelectron spectroscopyen_US
dc.titleNanoindentation response of zinc titanate thin films deposited by co-sputtering processen_US
dc.typeArticleen_US

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