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ELECTRON INELASTIC MEAN FREE PATHS VERSUS ATTENUATION LENGTHS IN SOLIDS

dc.citation.epage268en_US
dc.citation.issue2en_US
dc.citation.spage262en_US
dc.citation.volume25en_US
dc.citation.woscount19
dc.contributor.authorCHEN, YFen_US
dc.contributor.authorKEWI, CMen_US
dc.contributor.authorTUNG, CJen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:05:00Z
dc.date.available2014-12-08T15:05:00Z
dc.date.issued1992-02-14en_US
dc.description.abstractThe electron inelastic mean free path is of basic importance in theoretical and applied radiation physics and surface physics. It can be calculated using the dielectric function for the valence band and atomic generalized oscillator strengths tor inner shells of a solid. Although the experimentally determined attenuation length is conceptually different from the theoretically calculated mean free path, they are frequently used interchangeably in a loosely defined manner. For electrons with energies below a few keV, elastic scattering plays an important role in connecting these two quantities. This work employed elastic scattering cross sections derived using the partial wave expansion method with a solid potential to evaluate the path length distribution of an electron transmitted through a solid film. Both the analytical multiple-scattering formulation and the numerical Monte Carlo simulation have been applied in this investigation. A comparison between electron inelastic mean free paths and attenuation lengths was made.en_US
dc.identifier.doi10.1088/0022-3727/25/2/020en_US
dc.identifier.issn0022-3727en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/25/2/020en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/3522
dc.identifier.wosnumberWOS:A1992HE54000020
dc.language.isoen_USen_US
dc.titleELECTRON INELASTIC MEAN FREE PATHS VERSUS ATTENUATION LENGTHS IN SOLIDSen_US
dc.typeArticleen_US

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