Improved uniformity and electrical performance of continuous-wave laser-crystallized TFTs using metal-induced laterally crystallized si film
| dc.citation.epage | 1656 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 1653 | en_US |
| dc.citation.volume | 37 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chang, Chih-Pang | en_US |
| dc.contributor.author | Wu, Yewchung Sermon | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:10:45Z | |
| dc.date.available | 2014-12-08T15:10:45Z | |
| dc.date.issued | 2008-11-01 | en_US |
| dc.description.abstract | Continuous-wave (CW) laser crystallization (CLC) of amorphous Si (alpha-Si) has previously been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Unfortunately, their uniformity was poor because the shape of the beam profiles was Gaussian. In this study, alpha-Si film was replaced by Ni-metal-induced laterally crystallized Si (MILC-Si). MILCLC-Si was MILC-Si irradiated by a CW laser (lambda approximate to 532 nm and power approximate to 3.8 W). It was found that the performance and uniformity of the metal-induced laterally crystallized continuous-wave laser crystallization - thin film transistors (MILCLC-TFTs) were much better than those of the CLC-TFTs. Therefore, the MILCLC-TFT is suitable for application in systems on panels. | en_US |
| dc.identifier.doi | 10.1007/s11664-008-0536-y | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s11664-008-0536-y | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8225 | |
| dc.identifier.wosnumber | WOS:000259697800001 | |
| dc.language.iso | en_US | en_US |
| dc.subject | metal-induced lateral crystallization | en_US |
| dc.subject | continuous-wave laser | en_US |
| dc.subject | polycrystalline-silicon thin-film transistors | en_US |
| dc.title | Improved uniformity and electrical performance of continuous-wave laser-crystallized TFTs using metal-induced laterally crystallized si film | en_US |
| dc.type | Article | en_US |