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TI-TIO2 GATED MOS DIODE LIGHT SENSOR

dc.citation.epage896en_US
dc.citation.issue6en_US
dc.citation.spage891en_US
dc.citation.volume21en_US
dc.citation.woscount0
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorKAO, CWen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:32Z
dc.date.available2014-12-08T15:06:32Z
dc.date.issued1978en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5114
dc.identifier.wosnumberWOS:A1978FB30200013
dc.language.isoen_USen_US
dc.titleTI-TIO2 GATED MOS DIODE LIGHT SENSORen_US
dc.typeArticleen_US

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