Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory
| dc.citation.epage | en_US | |
| dc.citation.issue | 12 | en_US |
| dc.citation.volume | 50 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chou, Kun-I | en_US |
| dc.contributor.author | Cheng, Chun-Hu | en_US |
| dc.contributor.author | Chen, Po-Chun | en_US |
| dc.contributor.author | Yeh, Fon-Shan | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:22:12Z | |
| dc.date.available | 2014-12-08T15:22:12Z | |
| dc.date.issued | 2011-12-01 | en_US |
| dc.description.abstract | In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10(2), for 85 degrees C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx. (C) 2011 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.1143/JJAP.50.121801 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.50.121801 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15717 | |
| dc.identifier.wosnumber | WOS:000300707400024 | |
| dc.language.iso | en_US | en_US |
| dc.title | Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory | en_US |
| dc.type | Article | en_US |