High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators
| dc.citation.epage | 717 | en_US |
| dc.citation.spage | 715 | en_US |
| dc.citation.volume | 30 | en_US |
| dc.citation.woscount | 22 | en_US |
| dc.contributor.author | Lin, S. H. | en_US |
| dc.contributor.author | Chiang, K. C. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-02T06:00:13Z | |
| dc.date.available | 2019-04-02T06:00:13Z | |
| dc.date.issued | 2009-07-01 | en_US |
| dc.description.abstract | We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density. | en_US |
| dc.identifier.doi | 10.1109/LED.2009.2022775 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2009.2022775 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/149799 | |
| dc.identifier.wosnumber | WOS:000267607900006 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | high kappa | en_US |
| dc.subject | metal-insulator-metal (MIM) | en_US |
| dc.subject | TiO2 | en_US |
| dc.subject | ZrO2 | en_US |
| dc.title | High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators | en_US |
| dc.type | Article | en_US |
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