Structure of HfO2 films epitaxially grown on GaAs(001)
| dc.citation.epage | en_US | |
| dc.citation.issue | 12 | en_US |
| dc.citation.volume | 89 | en_US |
| dc.citation.woscount | 23 | |
| dc.contributor.author | Hsu, C. -H. | en_US |
| dc.contributor.author | Chang, P. | en_US |
| dc.contributor.author | Lee, W. C. | en_US |
| dc.contributor.author | Yang, Z. K. | en_US |
| dc.contributor.author | Lee, Y. J. | en_US |
| dc.contributor.author | Hong, M. | en_US |
| dc.contributor.author | Kwo, J. | en_US |
| dc.contributor.author | Huang, C. M. | en_US |
| dc.contributor.author | Lee, H. Y. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:15:47Z | |
| dc.date.available | 2014-12-08T15:15:47Z | |
| dc.date.issued | 2006-09-18 | en_US |
| dc.description.abstract | High-quality HfO2 films of technologically important thickness ranging from 1.8 to 17 nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO2 films and GaAs, in spite of a large lattice mismatch of > 8.5%. | en_US |
| dc.identifier.doi | 10.1063/1.2356895 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2356895 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11766 | |
| dc.identifier.wosnumber | WOS:000240680300092 | |
| dc.language.iso | en_US | en_US |
| dc.title | Structure of HfO2 films epitaxially grown on GaAs(001) | en_US |
| dc.type | Article | en_US |