EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C
| dc.citation.epage | 170 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 168 | en_US |
| dc.citation.volume | 66 | en_US |
| dc.citation.woscount | 33 | |
| dc.contributor.author | LIU, CC | en_US |
| dc.contributor.author | LEE, CY | en_US |
| dc.contributor.author | CHENG, KL | en_US |
| dc.contributor.author | CHENG, HC | en_US |
| dc.contributor.author | YEW, TR | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:34Z | |
| dc.date.available | 2014-12-08T15:03:34Z | |
| dc.date.issued | 1995-01-09 | en_US |
| dc.identifier.doi | 10.1063/1.113552 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.113552 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2104 | |
| dc.identifier.wosnumber | WOS:A1995QA69800019 | |
| dc.language.iso | en_US | en_US |
| dc.title | EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C | en_US |
| dc.type | Article | en_US |
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