三五族氮化合物半導體薄膜之物理特性研究---子計畫III：三五族氮化合物半導體物理特性以及電性量測分析與研究
| dc.contributor.author | 陳振芳 | en_US |
| dc.contributor.author | CHEN JENN-FANG | en_US |
| dc.contributor.department | 交通大學電子物理系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:20Z | |
| dc.date.available | 2014-12-13T10:37:20Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2112-M009-023 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=426255&docId=76117 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94559 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氮化合物 | zh_TW |
| dc.subject | 金屬有機化學蒸鍍法 | zh_TW |
| dc.subject | 深層能階 | zh_TW |
| dc.subject | 異質接面 | zh_TW |
| dc.subject | Nitride | en_US |
| dc.subject | Metal organic chemical vapor deposition (MOCVD) | en_US |
| dc.subject | Deep level | en_US |
| dc.subject | Heterojunction | en_US |
| dc.title | 三五族氮化合物半導體薄膜之物理特性研究---子計畫III：三五族氮化合物半導體物理特性以及電性量測分析與研究 | zh_TW |
| dc.title | Study of Physics and Electrical Properties of III-V Nitride Semiconductors | en_US |
| dc.type | Plan | en_US |