AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS
| dc.citation.epage | 1677 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1667 | en_US |
| dc.citation.volume | 37 | en_US |
| dc.citation.woscount | 14 | |
| dc.contributor.author | HUANG, GS | en_US |
| dc.contributor.author | WU, CY | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:32Z | |
| dc.date.available | 2014-12-08T15:05:32Z | |
| dc.date.issued | 1990-07-01 | en_US |
| dc.identifier.doi | 10.1109/16.55754 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.55754 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4069 | |
| dc.identifier.wosnumber | WOS:A1990DK33200009 | |
| dc.language.iso | en_US | en_US |
| dc.title | AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS | en_US |
| dc.type | Article | en_US |