RAMAN INTENSITY ENHANCEMENT OF THE SI PEAK BY CDS THIN-FILMS

dc.citation.epage	3275	en_US
dc.citation.issue	25	en_US
dc.citation.spage	3273	en_US
dc.citation.volume	59	en_US
dc.citation.woscount	6
dc.contributor.author	DAI, CM	en_US
dc.contributor.author	CHUU, DS	en_US
dc.contributor.author	HSIEH, WF	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electrophysics	en_US
dc.date.accessioned	2014-12-08T15:05:04Z
dc.date.available	2014-12-08T15:05:04Z
dc.date.issued	1991-12-16	en_US
dc.description.abstract	A method, which utilizes interference enhanced Raman scattering and resonant Raman scattering techniques, is used to overcome the low efficiency of Raman methods to diagnose highly reflective materials. As applied to the p-type Si wafer, the enhanced gain is up to nearly a factor of 80 at 4880 angstrom excitation. Because of the strong absorption of the scattered light, it is recommended that the suitable deposited thickness of CdS films should not be thicker than 700 angstrom.	en_US
dc.identifier.doi	10.1063/1.105728	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.105728	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/3600
dc.identifier.wosnumber	WOS:A1991GV07900024
dc.language.iso	en_US	en_US
dc.title	RAMAN INTENSITY ENHANCEMENT OF THE SI PEAK BY CDS THIN-FILMS	en_US
dc.type	Article	en_US

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