A new technique to extract oxide trap time constants in MOSFET's
| dc.citation.epage | 400 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 398 | en_US |
| dc.citation.volume | 17 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Wang, TH | en_US |
| dc.contributor.author | Chang, TE | en_US |
| dc.contributor.author | Chiang, LP | en_US |
| dc.contributor.author | Huang, C | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:28Z | |
| dc.date.available | 2014-12-08T15:02:28Z | |
| dc.date.issued | 1996-08-01 | en_US |
| dc.description.abstract | A new technique to determine oxide trap time Constants in a 0.6 mu m n-MOSFET subject to hot electron stress has been proposed, In this method, we used GIDL current as a direct monitor of the oxide charge detrapping-induced transient characteristics. An analytical model relating the GIDL current evolution to oxide trap time constants was derived, Our result shows that under a field-emission dominant oxide charge detrapping condition, V-gs = -4 V and V-ds = 3 V, the hot electron stress generated oxide traps exhibit two distinct time constants from seconds to several tens of seconds. | en_US |
| dc.identifier.doi | 10.1109/55.511587 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.511587 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1139 | |
| dc.identifier.wosnumber | WOS:A1996UZ85400005 | |
| dc.language.iso | en_US | en_US |
| dc.title | A new technique to extract oxide trap time constants in MOSFET's | en_US |
| dc.type | Article | en_US |