n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection
| dc.citation.epage | 1114 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1112 | en_US |
| dc.citation.volume | 37 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | Tasi, D. S. | en_US |
| dc.contributor.author | Kang, C. F. | en_US |
| dc.contributor.author | Wang, H. H. | en_US |
| dc.contributor.author | Lin, C. A. | en_US |
| dc.contributor.author | Ke, J. J. | en_US |
| dc.contributor.author | Chu, Y. H. | en_US |
| dc.contributor.author | He, J. H. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:22:19Z | |
| dc.date.available | 2014-12-08T15:22:19Z | |
| dc.date.issued | 2012-03-15 | en_US |
| dc.description.abstract | A visible-blind UV photodetector (PD) using a double heterojunction of n-ZnO/LaAlO3 (LAO)/p-Si was demonstrated. Inserted LAO layers exhibit electrical insulating properties and serve as blocking layers for photoexcited electrons from p-Si to n-ZnO, leading to an enhanced rectification ratio and a visible-blind UV detectivity of the n-ZnO/LAO/p-Si PDs due to the high potential barrier between LAO and p-Si layers (similar to 2.0 eV). These results support the use of n-ZnO/LAO/p-Si PDs in the visible-blind UV PDs in a visible-light environment. (C) 2012 Optical Society of America | en_US |
| dc.identifier.doi | 10.1364/OL.37.001112 | en_US |
| dc.identifier.issn | 0146-9592 | en_US |
| dc.identifier.journal | OPTICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1364/OL.37.001112 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/15801 | |
| dc.identifier.wosnumber | WOS:000302212200043 | |
| dc.language.iso | en_US | en_US |
| dc.title | n-ZnO/LaAlO3/p-Si heterojunction for visible-blind UV detection | en_US |
| dc.type | Article | en_US |