Excellent low-pressure-oxidized Si3N4 films on roughened poly-si for high-density DRAM's
| dc.citation.epage | 322 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 320 | en_US |
| dc.citation.volume | 19 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Liu, HW | en_US |
| dc.contributor.author | Cheng, HC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:48:45Z | |
| dc.date.available | 2014-12-08T15:48:45Z | |
| dc.date.issued | 1998-09-01 | en_US |
| dc.description.abstract | High-reliability and good-performance stacked storage capacitors with high capacitance value of 17.8 fF/mu m(2) has been realized using low-pressure-oxidized thin nitride films deposited on roughened poly-Si electrodes. This novel electrodes are fabricated by H3PO4-etched and RCA-cleaned. The leakage current density at +2.5 and -2.5 V are 9.07 x 10(-9) and -2.4 x 10(-8) A/cm(2), respectively, fulfilling the requirements of 256 Mb DRAM's. Weibull plots of time-dependent-dielectric-breakdown (TDDB) characteristics under constant current stress and constant voltage stress also show tight distribution and good electrical properties. Hence, this easy and simple technique is promising for future high-density DRAM's applications. | en_US |
| dc.identifier.doi | 10.1109/55.709627 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.709627 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32417 | |
| dc.identifier.wosnumber | WOS:000075544800002 | |
| dc.language.iso | en_US | en_US |
| dc.title | Excellent low-pressure-oxidized Si3N4 films on roughened poly-si for high-density DRAM's | en_US |
| dc.type | Article | en_US |