Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array
| dc.citation.epage | 841 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 839 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Wang, Kuan-Ti | en_US |
| dc.contributor.author | Hsueh, Fang-Chang | en_US |
| dc.contributor.author | Lu, Yu-Lun | en_US |
| dc.contributor.author | Chiang, Tsung-Yu | en_US |
| dc.contributor.author | Wu, Yi-Hong | en_US |
| dc.contributor.author | Liao, Chia-Chun | en_US |
| dc.contributor.author | Yen, Li-Chen | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:28:22Z | |
| dc.date.available | 2014-12-08T15:28:22Z | |
| dc.date.issued | 2012-06-01 | en_US |
| dc.description.abstract | This letter is the first to successfully demonstrate the 2-bit/cell wrapped-selected-gate (WSG) SONOS thin-film transistor (TFT) memory using source-side injection (SSI). Because of the higher programming efficiency of SSI, a memory window of approximately 3 V can be easily achieved in 10 mu s and 30 ms for the program and erase modes, respectively. In addition, we performed an excellent 2-bit/cell distinguish margin for 3-V memory window in WSG-SONOS TFT memory. The optimal reliability of the endurance and data retention tests can be executed by adjusting the applied voltage appropriately. | en_US |
| dc.identifier.doi | 10.1109/LED.2012.2192090 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2012.2192090 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20520 | |
| dc.identifier.wosnumber | WOS:000305835000033 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Source-side injection (SSI) | en_US |
| dc.subject | thin-film transistor memory | en_US |
| dc.subject | two-bit/cell | en_US |
| dc.subject | wrapped-selected-gate (WSG)-SONOS | en_US |
| dc.title | Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array | en_US |
| dc.type | Article | en_US |