Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate
| dc.citation.epage | en_US | |
| dc.citation.issue | 18 | en_US |
| dc.citation.volume | 88 | en_US |
| dc.citation.woscount | 30 | |
| dc.contributor.author | Peng, WC | en_US |
| dc.contributor.author | Wu, YS | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:16:37Z | |
| dc.date.available | 2014-12-08T15:16:37Z | |
| dc.date.issued | 2006-05-01 | en_US |
| dc.description.abstract | An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs. (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2199613 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2199613 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12267 | |
| dc.identifier.wosnumber | WOS:000237321600017 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate | en_US |
| dc.type | Article | en_US |