Fabrication of narrow-band self-filtering GaAs photodetector by epitaxy

Abstract

A narrow-band self-filtering (NBSF) GaAs photodiode has been fabricated by the LPE technique, where epilayers of high-low-high N doping were grown on a P-type substrate. By proper control of the thickness and doping concentration of each layer, it can be demonstrated that the fabricated NBSF detector has a spectral bandwidth as narrow as 315 angstrom at 880 nm peak wavelength. This means over 98% of the blue-side light is suppressible, indicating that the NBSF photodetector is a useful device for many applications where the suppression of high background light is necessary. (c) 2005 American Institute of Physics.