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DUAL-WAVELENGTH BRAGG REFLECTORS USING GAAS/ALAS MULTILAYERS

dc.citation.epage1981en_US
dc.citation.issue22en_US
dc.citation.spage1980en_US
dc.citation.volume29en_US
dc.citation.woscount7
dc.contributor.authorLEE, CPen_US
dc.contributor.authorTSAI, CMen_US
dc.contributor.authorTSANG, JSen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:04:18Z
dc.date.available2014-12-08T15:04:18Z
dc.date.issued1993-10-28en_US
dc.description.abstractDual-wavelength Bragg reflectors have been demonstrated using GaAs/AlAs multilayer heterostructures. Desired reflection bands can be obtained by adding proper phase shifters in a GaAs/AlAs periodic multilayer structure. The structure is based on the digital representation of the addition of two periodic functions.en_US
dc.identifier.issn0013-5194en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/2811
dc.identifier.wosnumberWOS:A1993NE96800052
dc.language.isoen_USen_US
dc.subjectGRATING FILTERSen_US
dc.subjectOPTOELECTRONICSen_US
dc.titleDUAL-WAVELENGTH BRAGG REFLECTORS USING GAAS/ALAS MULTILAYERSen_US
dc.typeArticleen_US

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