Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots
| dc.citation.epage | en_US | |
| dc.citation.issue | 26 | en_US |
| dc.citation.volume | 88 | en_US |
| dc.citation.woscount | 52 | |
| dc.contributor.author | Lin, KF | en_US |
| dc.contributor.author | Cheng, HM | en_US |
| dc.contributor.author | Hsu, HC | en_US |
| dc.contributor.author | Hsieh, WF | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:16:21Z | |
| dc.date.available | 2014-12-08T15:16:21Z | |
| dc.date.issued | 2006-06-26 | en_US |
| dc.description.abstract | Both band gap engineering and spatial confinement of optical phonon were observed depending upon the size of ZnO quantum dots at room temperature. Size-dependent blueshifts of photoluminescence and absorption spectra reveal the quantum confinement effect. The measured Raman spectral shift and asymmetry for the E-2(high) mode caused by localization of optical phonons agree well with that calculated by using the modified spatial correlation model. (c) 2006 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2218775 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2218775 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12131 | |
| dc.identifier.wosnumber | WOS:000238717200073 | |
| dc.language.iso | en_US | en_US |
| dc.title | Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots | en_US |
| dc.type | Article | en_US |