Nitrogenated amorphous InGaZnO thin film transistor
| dc.citation.epage | en_US | |
| dc.citation.issue | 5 | en_US |
| dc.citation.volume | 98 | en_US |
| dc.citation.woscount | 20 | |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Chou, Yi-Teh | en_US |
| dc.contributor.author | Teng, Li-Feng | en_US |
| dc.contributor.author | Li, Fu-Hai | en_US |
| dc.contributor.author | Shieh, Han-Ping | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:37:36Z | |
| dc.date.available | 2014-12-08T15:37:36Z | |
| dc.date.issued | 2011-01-31 | en_US |
| dc.description.abstract | This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO: N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO: N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3551537] | en_US |
| dc.identifier.doi | 10.1063/1.3551537 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3551537 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25860 | |
| dc.identifier.wosnumber | WOS:000286988400030 | |
| dc.language.iso | en_US | en_US |
| dc.title | Nitrogenated amorphous InGaZnO thin film transistor | en_US |
| dc.type | Article | en_US |