<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css"> Skip to main content

Gas Sensing Ability on Polycrystalline-Silicon Nanowire

dc.citation.volume7en_US
dc.citation.woscount1en_US
dc.contributor.authorLo, Yen-Renen_US
dc.contributor.authorChen, Huang-Ming Philipen_US
dc.contributor.authorYang, Yuh-Shyongen_US
dc.contributor.authorLu, Ming-Peien_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.department分子醫學與生物工程研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.contributor.departmentInstitute of Molecular Medicine and Bioengineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2019-04-02T05:59:30Z
dc.date.available2019-04-02T05:59:30Z
dc.date.issued2018-01-01en_US
dc.description.abstractTrace of protic gases can alter the conductivity of the polycrystalline silicon nanowire (poly-Si NW) field effect transistor (FET). The aprotic gases have no effect on the electrical parameters. The proposed mechanism is due to the surface grain boundary of poly-Si NW. The direct evidence is obtained from the comparison between single-and poly-Si NW. The electrical parameters are varied according to the relative humidity levels. Nevertheless, the water molecules can be removed by vacuum indicating that it is physical absorption on the surface. As a result, the poly-Si NW FET has potential to be a reusable device for protic gas sensor. (C) The Author(s) 2018. Published by ECS.en_US
dc.identifier.doi10.1149/2.0161807jssen_US
dc.identifier.issn2162-8769en_US
dc.identifier.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1149/2.0161807jssen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/147960
dc.identifier.wosnumberWOS:000440837600017en_US
dc.language.isoen_USen_US
dc.titleGas Sensing Ability on Polycrystalline-Silicon Nanowireen_US
dc.typeArticleen_US

Files

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description: