Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps
| dc.citation.epage | en_US | |
| dc.citation.issue | 24 | en_US |
| dc.citation.volume | 100 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Shaposhnikov, A. V. | en_US |
| dc.contributor.author | Perevalov, T. V. | en_US |
| dc.contributor.author | Gritsenko, V. A. | en_US |
| dc.contributor.author | Cheng, C. H. | en_US |
| dc.contributor.author | Chin, A. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:35Z | |
| dc.date.available | 2014-12-08T15:23:35Z | |
| dc.date.issued | 2012-06-11 | en_US |
| dc.description.abstract | Model of evenly distributed traps in bulk dielectric is proposed for the resistive memory switching mechanism. Switching from high resistance to the low resistance state is explained by several-fold increase in trap concentration after the application of switching voltage. Both high and low resistance conductivities are governed by multi-phonon ionization and tunneling between neighboring traps. Thermal trap energy for oxygen vacancy and electron effective mass for crystal alpha-GeO2 were calculated using density functional theory and used for the fitting of our charge transport model of resistive memory. The model was verified on the TaN-GeO2-Ni structure with good semi-quantitative agreement with experiment. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729589] | en_US |
| dc.identifier.doi | 243506 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/243506 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16484 | |
| dc.identifier.wosnumber | WOS:000305269200078 | |
| dc.language.iso | en_US | en_US |
| dc.title | Mechanism of GeO2 resistive switching based on the multi-phonon assisted tunneling between traps | en_US |
| dc.type | Article | en_US |