Cerium oxide nanocrystals for nonvolatile memory applications
| dc.citation.epage | en_US | |
| dc.citation.issue | 26 | en_US |
| dc.citation.volume | 91 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | Yang, Shao-Ming | en_US |
| dc.contributor.author | Chien, Chao-Hsin | en_US |
| dc.contributor.author | Huang, Jiun-Jia | en_US |
| dc.contributor.author | Lei, Tan-Fu | en_US |
| dc.contributor.author | Tsai, Ming-Jinn | en_US |
| dc.contributor.author | Lee, Lurng-Shehng | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:57Z | |
| dc.date.available | 2014-12-08T15:12:57Z | |
| dc.date.issued | 2007-12-24 | en_US |
| dc.description.abstract | The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin CeO(2) film on the SiO(2) tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the CeO(2) nanocrystals embedded in SiO(2) are estimated to be about 8-10 nm and (3-7)x10(11)/cm(-2) after a high-temperature annealing with different ambients on 900 degrees C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications. (c) 2007 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2821367 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2821367 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9996 | |
| dc.identifier.wosnumber | WOS:000251987400023 | |
| dc.language.iso | en_US | en_US |
| dc.title | Cerium oxide nanocrystals for nonvolatile memory applications | en_US |
| dc.type | Article | en_US |